IRF1104L |
RFQ for IRF1104L Required Field |
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| Technical/Catalog Information | IRF1104LPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 60A, 10V |
| Input Capacitance (Ciss) @ Vds | 2900pF @ 25V |
| Power - Max | 2.4W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 93nC @ 10V |
| Package / Case | TO-262-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF1104LPBF IRF1104LPBF |
| Product | Manufacturers | Pack | D/C |
| IRF1104L | - | TO-262 | `06+(pb-free) |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF1104L) is available for lowprofile applications.
Features |
| `Advanced Process Technology` Ultra Low On-Resistance` Surface Mount (IRF1104S)` Low-profile through-hole (IRF1104L)` 175 Operating Temperature` Fast Switching` Fully Avalanche Rated |
| Parameter | Max. | Units | |
| ID @ TC =25 | Continuous Drain Current,VGS @ 10V | 100 | A |
| ID @ TC =100 | Continuous Drain Current,VGS @ 10V | 71 | |
| IDM | Pulsed Drain Current | 400 | |
| PD @ TA =25 | Power Dissipation | 2.4 | W |
| PD @ TC =25 | Power Dissipation | 170 | W |
| Linear Derating Factor | 1.1 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 350 | mJ |
| IAR | Avalanche Current | 60 | A |
| EAR | Repetitive Avalanche Energy | 17 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
